EpiNex® n-type wafer
- EpiNex110 wafers with n-type doping
- Cell efficiency of >24% achieved
- 110–130 μm thin wafers with 4 ms MCLT
- EpiSpace60p, ultra-thin p-type wafers for space, cell efficiency >24%
Technology roadmap
The path to 30% efficiency
Join us on the journey towards revolutionary new wafer materials, connecting direct wafer growth, radiation-aware device architecture and modular manufacturing in one progression for space power.
Wafer generations
EpiNex® production wafer
- 90–110 μm thin wafers
- Average of 4–6 ms MCLT
- Cell efficiency: 26%
EpiNex® advanced material
- 80–90 μm thin wafers
- Average of 5–7 ms MCLT
- Engineered wafers for advanced cell technologies
- Cell efficiency: >27%
EpiNex® tandem
- Engineered wafers for advanced tandem cells
- Next-generation technology for ultra-high-efficiency cells
- Cell efficiency: >30%
A disciplined path forward
Advance the wafer and the mission together.
Each stage builds evidence and integration maturity without separating material innovation from the power system it will ultimately serve.
01
Foundation
Engineer the material
Refine ultra-thin epitaxial growth, thickness control and dopant architectures for orbital power.
02
Evidence
Characterize resilience
Build evidence around electrical behavior under proton radiation conditions.
03
Integration
Develop with the system
Align wafer and cell design with array, spacecraft and mission requirements.
04
Scale
Deploy secure capacity
Replicate modular production close to the aerospace and defense customers it supports.
Build the evidence for longer LEO missions.
Contact us
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