Space / Measured performance
Graded doping. Measurably more power after irradiation.
5 MeV proton testing shows how engineered EpiNex® wafers preserve cell efficiency as radiation damage accumulates.
Demonstrated radiation performance
Engineered Wafers. Higher End-of-Life Power.
Measured Cell Efficiency
Absolute solar cell efficiency before and after accelerated 5 MeV proton testing: engineered EpiNex® wafers versus conventional CZ silicon.
Engineered Doping Gradients Improve Radiation Resilience
Following accelerated 5 MeV proton testing, graded EpiNex® cells achieved 18.0% efficiency, compared with 16.8% for both uniformly doped CZ and EpiNex® controls.
Test context: Results are from experimental mini-cell coupons developed for comparative radiation testing, not optimized commercial-size solar cells. The relevant comparison is relative radiation-induced degradation and post-irradiation efficiency under identical test conditions.
Test conditions: 5 MeV protons, fluence 5 × 10⁹ p/cm². Efficiencies measured under AM1.5 illumination.
Degradation percentages represent relative efficiency loss from BOL.
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